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Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures.

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Bibliographic Details
Title: Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures.
Authors: Selvidge, Jennifer1, Hughes, Eamonn T.1, Norman, Justin C.2, Shang, Chen1, Kennedy, M. J.3, Dumont, Mario3, Netherton, Andrew M.3, Zhang, Zeyu3, Herrick, Robert W.4, Bowers, John E.1,3, Mukherjee, Kunal5
Source: Applied Physics Letters; 5/21/2021, Vol. 118 Issue 19, p1-7, 7p
Database: Applied Science & Technology Source
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