Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire.
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| Title: | Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire. |
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| Authors: | Lazarev, Sergey1,2, dr.s.lazarev@gmail.comyoung.yong.kim@xfel.eu, Kim, Young Yong1, luca.gelisio@xfel.eu, Gelisio, Luca1, ivan.zaluzhnyy@uni-tuebingen.de, Bi, Zhaoxia3, zhaoxia.bi@ftf.lth.se, Nowzari, Ali3, anowzary@gmail.com, Zaluzhnyy, Ivan A.1, ruslan.khubbutdinov@desy.de, Khubbutdinov, Ruslan1,4, dmitry.dzhigaev@sljus.lu.se, Dzhigaev, Dmitry1, michael.sprung@desy.de, Jeromin, Arno5, arno.jeromin@desy.de, Keller, Thomas F.5,6, thomas.keller@desy.de, Sprung, Michael1, Mikkelsen, Anders3, anders.mikkelsen@sljus.lu.se, Samuelson, Lars3, lars.samuelson@ftf.lth.se, Vartanyants, Ivan A.1,4, dr.s.lazarev@gmail.com |
| Source: | Applied Sciences (2076-3417); Oct2021, Vol. 11 Issue 20, p9419, 11p |
| Database: | Applied Science & Technology Source |
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