Properties of Al 2 O 3 Thin Films Grown by PE-ALD at Low Temperature Using H 2 O and O 2 Plasma Oxidants.
Saved in:
| Title: | Properties of Al 2 O 3 Thin Films Grown by PE-ALD at Low Temperature Using H 2 O and O 2 Plasma Oxidants. |
|---|---|
| Authors: | Castillo-Saenz, Jhonathan1, benval@uabc.edu.mxjhonathan.castillo@uabc.edu.mx, Nedev, Nicola1, jhonathan.castillo@uabc.edu.mxmcuriel@uabc.edu.mx, Valdez-Salas, Benjamín1, david.mateos@uabc.edu.mx, Curiel-Alvarez, Mario1, oscar.manuel.perez.landeros@uabc.edu.mx, Mendivil-Palma, María Isabel2, maria.mendivil@cimav.edu.mx, Hernandez-Como, Norberto3, nohernandezc@ipn.mx, Martinez-Puente, Marcelo2, marcelo.martinez@cimav.edu.mx, Mateos, David1, Perez-Landeros, Oscar1, Martinez-Guerra, Eduardo2, jhonathan.castillo@uabc.edu.mx |
| Source: | Coatings (2079-6412); Oct2021, Vol. 11 Issue 10, p1266-1266, 1p |
| Database: | Applied Science & Technology Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
Be the first to leave a comment!