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A 3T/Cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs.

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Title: A 3T/Cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs.
Authors: Juejian Wu1, Hongtao Zhong1, Kai Ni2, Yongpan Liu1, Huazhong Yang1, Xueqing Li1, xueqingli@tsinghua.edu.cn
Source: DAC: Annual ACM/IEEE Design Automation Conference; 2019, Issue 56, p7-12, 6p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
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PubType: Conference
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  Data: A 3T/Cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs.
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  Data: <searchLink fieldCode="JN" term="%22DAC%3A+Annual+ACM%2FIEEE+Design+Automation+Conference%22">DAC: Annual ACM/IEEE Design Automation Conference</searchLink>; 2019, Issue 56, p7-12, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=155539395
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        Value: 10.1145/3316781.3317737
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        Text: English
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      – TitleFull: A 3T/Cell Practical Embedded Nonvolatile Memory Supporting Symmetric Read and Write Access Based on Ferroelectric FETs.
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            NameFull: Hongtao Zhong
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              Text: 2019
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              Y: 2019
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