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Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device.

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Title: Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device.
Authors: Park, Jong‐Whi1, Moon, Chang‐Jin1, Ju, Young‐Min1, Jang, Yong‐Rae1, Park, Simon S.2, Kim, Hak‐Sung1,3, kima@hanyang.ac.kr
Source: Advanced Electronic Materials; Mar2022, Vol. 8 Issue 3, p1-10, 10p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 155694915
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Electronic+Materials%22">Advanced Electronic Materials</searchLink>; Mar2022, Vol. 8 Issue 3, p1-10, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=155694915
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        Value: 10.1002/aelm.202101018
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        Text: English
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              Text: Mar2022
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