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Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device.

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Bibliographic Details
Title: Depth Gradient Reduced Graphene Oxide Layer via Intense Pulsed Light Annealing Process for the Flexible Resistive Random Access Memory Device.
Authors: Park, Jong‐Whi1, Moon, Chang‐Jin1, Ju, Young‐Min1, Jang, Yong‐Rae1, Park, Simon S.2, Kim, Hak‐Sung1,3, kima@hanyang.ac.kr
Source: Advanced Electronic Materials; Mar2022, Vol. 8 Issue 3, p1-10, 10p
Database: Applied Science & Technology Source
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