Pantle, F., Karlinger, M., Wörle, S., Becker, F., Höldrich, T., Sirotti, E., . . . Stutzmann, M. (2022). Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy. Journal of Applied Physics, 132(18), 1. https://doi.org/10.1063/5.0098016
Chicago Style (17th ed.) CitationPantle, Florian, Monika Karlinger, Simon Wörle, Fabian Becker, Theresa Höldrich, Elise Sirotti, Max Kraut, and Martin Stutzmann. "Crystal Side Facet-tuning of GaN Nanowires and Nanofins Grown by Molecular Beam Epitaxy." Journal of Applied Physics 132, no. 18 (2022): 1. https://doi.org/10.1063/5.0098016.
MLA (9th ed.) CitationPantle, Florian, et al. "Crystal Side Facet-tuning of GaN Nanowires and Nanofins Grown by Molecular Beam Epitaxy." Journal of Applied Physics, vol. 132, no. 18, 2022, p. 1, https://doi.org/10.1063/5.0098016.