APA (7th ed.) Citation

Lu, H., Wen, K., Du, F., Tang, C., Cheng, W., Wei, B., . . . Yu, H. (2023). Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering. Materials Science in Semiconductor Processing, 154, N.PAG. https://doi.org/10.1016/j.mssp.2022.107221

Chicago Style (17th ed.) Citation

Lu, Honghao, Kangyao Wen, Fangzhou Du, Chuying Tang, Wei-Chih Cheng, Bowen Wei, Honglin Li, Qing Wang, and Hongyu Yu. "Quasi-normally off AlGaN/GaN High-electron-mobility Transistors with P-type CuOx Gate Synthesized Through Magnetron Reactive Sputtering." Materials Science in Semiconductor Processing 154 (2023): N.PAG. https://doi.org/10.1016/j.mssp.2022.107221.

MLA (9th ed.) Citation

Lu, Honghao, et al. "Quasi-normally off AlGaN/GaN High-electron-mobility Transistors with P-type CuOx Gate Synthesized Through Magnetron Reactive Sputtering." Materials Science in Semiconductor Processing, vol. 154, 2023, p. N.PAG, https://doi.org/10.1016/j.mssp.2022.107221.