Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering.
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| Title: | Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering. |
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| Authors: | Lu, Honghao1, Wen, Kangyao2, Du, Fangzhou1, Tang, Chuying1, Cheng, Wei-Chih1, Wei, Bowen1, Li, Honglin1, Wang, Qing1,3, wangq7@sustech.edu.cn, Yu, Hongyu1,3, yuhy@sustech.edu.cn |
| Source: | Materials Science in Semiconductor Processing; Feb2023, Vol. 154, pN.PAG-N.PAG, 1p |
| Database: | Applied Science & Technology Source |
| ISSN: | 13698001 |
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| DOI: | 10.1016/j.mssp.2022.107221 |
