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Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering.

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Title: Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering.
Authors: Lu, Honghao1, Wen, Kangyao2, Du, Fangzhou1, Tang, Chuying1, Cheng, Wei-Chih1, Wei, Bowen1, Li, Honglin1, Wang, Qing1,3, wangq7@sustech.edu.cn, Yu, Hongyu1,3, yuhy@sustech.edu.cn
Source: Materials Science in Semiconductor Processing; Feb2023, Vol. 154, pN.PAG-N.PAG, 1p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 160368219
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering.
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  Data: <searchLink fieldCode="AU" term="%22Lu%2C+Honghao%22">Lu, Honghao</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wen%2C+Kangyao%22">Wen, Kangyao</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Du%2C+Fangzhou%22">Du, Fangzhou</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tang%2C+Chuying%22">Tang, Chuying</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Cheng%2C+Wei-Chih%22">Cheng, Wei-Chih</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wei%2C+Bowen%22">Wei, Bowen</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Li%2C+Honglin%22">Li, Honglin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Qing%22">Wang, Qing</searchLink><relatesTo>1,3</relatesTo>, <i>wangq7@sustech.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Yu%2C+Hongyu%22">Yu, Hongyu</searchLink><relatesTo>1,3</relatesTo>, <i>yuhy@sustech.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Materials+Science+in+Semiconductor+Processing%22">Materials Science in Semiconductor Processing</searchLink>; Feb2023, Vol. 154, pN.PAG-N.PAG, 1p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=160368219
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1016/j.mssp.2022.107221
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      – Code: eng
        Text: English
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      – TitleFull: Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering.
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            NameFull: Lu, Honghao
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            NameFull: Wen, Kangyao
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            NameFull: Du, Fangzhou
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            NameFull: Tang, Chuying
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            NameFull: Cheng, Wei-Chih
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            NameFull: Wei, Bowen
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            NameFull: Wang, Qing
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            – D: 01
              M: 02
              Text: Feb2023
              Type: published
              Y: 2023
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              Value: 13698001
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              Value: 154
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            – TitleFull: Materials Science in Semiconductor Processing
              Type: main
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