APA (7th ed.) Citation

Jiang, Y., Du, F., He, J., Qiao, Z., Tang, C., Tang, X., . . . Yu, H. (2022). Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance. Applied Physics Letters, 121(21), 1. https://doi.org/10.1063/5.0117205

Chicago Style (17th ed.) Citation

Jiang, Yang, FangZhou Du, JiaQi He, ZePeng Qiao, ChuYing Tang, XinYi Tang, ZhongRui Wang, Qing Wang, and HongYu Yu. "Microscopic Formation Mechanism of Si/Tl5Al1/TiN Ohmic Contact on Non-recessed I-InAlN/GaN Heterostructures with Ultra-low Resistance." Applied Physics Letters 121, no. 21 (2022): 1. https://doi.org/10.1063/5.0117205.

MLA (9th ed.) Citation

Jiang, Yang, et al. "Microscopic Formation Mechanism of Si/Tl5Al1/TiN Ohmic Contact on Non-recessed I-InAlN/GaN Heterostructures with Ultra-low Resistance." Applied Physics Letters, vol. 121, no. 21, 2022, p. 1, https://doi.org/10.1063/5.0117205.