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Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance.

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Title: Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance.
Authors: Jiang, Yang1,2, Du, FangZhou1, He, JiaQi1, Qiao, ZePeng1, Tang, ChuYing1, Tang, XinYi1, Wang, ZhongRui2,3, Wang, Qing1,4,5, wangq7@sustech.edu.cn, Yu, HongYu1,4,5, yuhy@sustech.edu.cn
Source: Applied Physics Letters; 11/21/2022, Vol. 121 Issue 21, p1-8, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 160370697
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance.
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  Data: <searchLink fieldCode="AU" term="%22Jiang%2C+Yang%22">Jiang, Yang</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Du%2C+FangZhou%22">Du, FangZhou</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22He%2C+JiaQi%22">He, JiaQi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Qiao%2C+ZePeng%22">Qiao, ZePeng</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tang%2C+ChuYing%22">Tang, ChuYing</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Tang%2C+XinYi%22">Tang, XinYi</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+ZhongRui%22">Wang, ZhongRui</searchLink><relatesTo>2,3</relatesTo><br /><searchLink fieldCode="AU" term="%22Wang%2C+Qing%22">Wang, Qing</searchLink><relatesTo>1,4,5</relatesTo>, <i>wangq7@sustech.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Yu%2C+HongYu%22">Yu, HongYu</searchLink><relatesTo>1,4,5</relatesTo>, <i>yuhy@sustech.edu.cn</i>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 11/21/2022, Vol. 121 Issue 21, p1-8, 8p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=160370697
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        Value: 10.1063/5.0117205
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        Text: English
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      – TitleFull: Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance.
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              Text: 11/21/2022
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