View in EDS

Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance.

Saved in:
Bibliographic Details
Title: Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance.
Authors: Jiang, Yang1,2, Du, FangZhou1, He, JiaQi1, Qiao, ZePeng1, Tang, ChuYing1, Tang, XinYi1, Wang, ZhongRui2,3, Wang, Qing1,4,5, wangq7@sustech.edu.cn, Yu, HongYu1,4,5, yuhy@sustech.edu.cn
Source: Applied Physics Letters; 11/21/2022, Vol. 121 Issue 21, p1-8, 8p
Database: Applied Science & Technology Source
Be the first to leave a comment!
You must be logged in first