APA (7th ed.) Citation

He, Q., Zhou, X., Li, Q., Hao, W., Liu, Q., Han, Z., . . . Long, S. (2022). Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications. IEEE Electron Device Letters, 43(11), 1933. https://doi.org/10.1109/LED.2022.3205326

Chicago Style (17th ed.) Citation

He, Qiming, et al. "Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications." IEEE Electron Device Letters 43, no. 11 (2022): 1933. https://doi.org/10.1109/LED.2022.3205326.

MLA (9th ed.) Citation

He, Qiming, et al. "Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications." IEEE Electron Device Letters, vol. 43, no. 11, 2022, p. 1933, https://doi.org/10.1109/LED.2022.3205326.