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Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications.

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Title: Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications.
Authors: He, Qiming1, Zhou, Xuanze1, Li, Qiuyan1, Hao, Weibing1, Liu, Qi1, Han, Zhao1, Zhou, Kai1, Chen, Chen1, Peng, Jinlan1, Xu, Guangwei1, xugw@ustc.edu.cn, Zhao, Xiaolong1, Wu, Xiaojun2, Long, Shibing1, shibinglong@ustc.edu.cn
Source: IEEE Electron Device Letters; Nov2022, Vol. 43 Issue 11, p1933-1936, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 160687638
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Selective High-Resistance Zones Formed by Oxygen Annealing for -GaO Schottky Diode Applications.
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        Value: 10.1109/LED.2022.3205326
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              Text: Nov2022
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