APA (7th ed.) Citation

Weiss, T. P., Minguez‐Bacho, I., Zuccalà, E., Melchiorre, M., Valle, N., El Adib, B., . . . Siebentritt, S. (2023). Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb2Se3/CdS stacks for reduced interface recombination and increased open‐circuit voltages. Progress in Photovoltaics, 31(3), 203. https://doi.org/10.1002/pip.3625

Chicago Style (17th ed.) Citation

Weiss, Thomas Paul, et al. "Post‐deposition Annealing and Interfacial Atomic Layer Deposition Buffer Layers of Sb2Se3/CdS Stacks for Reduced Interface Recombination and Increased Open‐circuit Voltages." Progress in Photovoltaics 31, no. 3 (2023): 203. https://doi.org/10.1002/pip.3625.

MLA (9th ed.) Citation

Weiss, Thomas Paul, et al. "Post‐deposition Annealing and Interfacial Atomic Layer Deposition Buffer Layers of Sb2Se3/CdS Stacks for Reduced Interface Recombination and Increased Open‐circuit Voltages." Progress in Photovoltaics, vol. 31, no. 3, 2023, p. 203, https://doi.org/10.1002/pip.3625.