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Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb2Se3/CdS stacks for reduced interface recombination and increased open‐circuit voltages.

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Title: Post‐deposition annealing and interfacial atomic layer deposition buffer layers of Sb2Se3/CdS stacks for reduced interface recombination and increased open‐circuit voltages.
Authors: Weiss, Thomas Paul1, thomas.weiss@uni.lu, Minguez‐Bacho, Ignacio2, Zuccalà, Elena1, Melchiorre, Michele1, Valle, Nathalie3, El Adib, Brahime3, Yokosawa, Tadahiro4, Spiecker, Erdmann4, Bachmann, Julien2,5, Dale, Phillip J.1, Siebentritt, Susanne1
Source: Progress in Photovoltaics; Mar2023, Vol. 31 Issue 3, p203-219, 17p
Database: Applied Science & Technology Source
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        Value: 10.1002/pip.3625
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              Text: Mar2023
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              Y: 2023
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