APA (7th ed.) Citation

Kareem, A. A., Rasheed, H. K., Polu, A. R., Ndruru, S. T. C. L., Rabadanov, K. S., & Alomayri, T. (2023). Effect of phosphoric acid chemical etching on morphological, structural, electrical, and optical properties of porous GaAs Schottky diodes. Journal of Materials Science: Materials in Electronics, 34(19), 1. https://doi.org/10.1007/s10854-023-10882-0

Chicago Style (17th ed.) Citation

Kareem, Aseel A., Hussein Kh Rasheed, Anji Reddy Polu, Sun Theo Constan Lotebulo Ndruru, Kamil Sh Rabadanov, and Thamer Alomayri. "Effect of Phosphoric Acid Chemical Etching on Morphological, Structural, Electrical, and Optical Properties of Porous GaAs Schottky Diodes." Journal of Materials Science: Materials in Electronics 34, no. 19 (2023): 1. https://doi.org/10.1007/s10854-023-10882-0.

MLA (9th ed.) Citation

Kareem, Aseel A., et al. "Effect of Phosphoric Acid Chemical Etching on Morphological, Structural, Electrical, and Optical Properties of Porous GaAs Schottky Diodes." Journal of Materials Science: Materials in Electronics, vol. 34, no. 19, 2023, p. 1, https://doi.org/10.1007/s10854-023-10882-0.