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Effect of phosphoric acid chemical etching on morphological, structural, electrical, and optical properties of porous GaAs Schottky diodes.

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Title: Effect of phosphoric acid chemical etching on morphological, structural, electrical, and optical properties of porous GaAs Schottky diodes.
Authors: Kareem, Aseel A.1, aseel.a@sc.uobaghdad.edu.iq, Rasheed, Hussein Kh.1, Polu, Anji Reddy2, Ndruru, Sun Theo Constan Lotebulo3, Rabadanov, Kamil Sh.4, Alomayri, Thamer5
Source: Journal of Materials Science: Materials in Electronics; Jul2023, Vol. 34 Issue 19, p1-9, 9p
Database: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: Effect of phosphoric acid chemical etching on morphological, structural, electrical, and optical properties of porous GaAs Schottky diodes.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jul2023, Vol. 34 Issue 19, p1-9, 9p
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      – Type: doi
        Value: 10.1007/s10854-023-10882-0
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      – Code: eng
        Text: English
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        PageCount: 9
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      – TitleFull: Effect of phosphoric acid chemical etching on morphological, structural, electrical, and optical properties of porous GaAs Schottky diodes.
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            NameFull: Kareem, Aseel A.
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            NameFull: Rasheed, Hussein Kh.
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            NameFull: Polu, Anji Reddy
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            NameFull: Ndruru, Sun Theo Constan Lotebulo
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            NameFull: Rabadanov, Kamil Sh.
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            NameFull: Alomayri, Thamer
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            – D: 01
              M: 07
              Text: Jul2023
              Type: published
              Y: 2023
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              Value: 34
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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