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Nonequilibrium VLS-grown stable ST12-Ge thin film on Si substrate: a study on strain-induced band engineering.

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Title: Nonequilibrium VLS-grown stable ST12-Ge thin film on Si substrate: a study on strain-induced band engineering.
Authors: Mandal, S.1, Nag Chowdhury, B.1, Tiwari, A.2, Kanungo, S.2, Rana, N.3, Banerjee, A.3, Chattopadhyay, S.1,4, scelc@caluniv.ac.in
Source: Journal of Materials Science; Jul2023, Vol. 58 Issue 27, p11159-11173, 15p, 1 Diagram, 2 Charts, 5 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 164875272
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Nonequilibrium VLS-grown stable ST12-Ge thin film on Si substrate: a study on strain-induced band engineering.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%22">Journal of Materials Science</searchLink>; Jul2023, Vol. 58 Issue 27, p11159-11173, 15p, 1 Diagram, 2 Charts, 5 Graphs
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10853-023-08724-9
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      – Code: eng
        Text: English
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        PageCount: 15
        StartPage: 11159
    Titles:
      – TitleFull: Nonequilibrium VLS-grown stable ST12-Ge thin film on Si substrate: a study on strain-induced band engineering.
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            NameFull: Mandal, S.
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            NameFull: Nag Chowdhury, B.
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            NameFull: Tiwari, A.
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            NameFull: Kanungo, S.
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            NameFull: Rana, N.
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            NameFull: Banerjee, A.
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            – D: 21
              M: 07
              Text: Jul2023
              Type: published
              Y: 2023
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              Value: 58
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              Value: 27
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            – TitleFull: Journal of Materials Science
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