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Phenomenology of M–N rule and high-field conduction in Ge–Te–Se–Sc rare-earth doped glasses.

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Title: Phenomenology of M–N rule and high-field conduction in Ge–Te–Se–Sc rare-earth doped glasses.
Authors: Agarwal, Surbhi1, Dwivedi, D. K.1, todkdwivedi@gmail.com, Lohia, Pooja2, Sharma, Suresh Kumar3, Habila, Mohamed A.4, Hossain, M. Khalid5,6, khalid.baec@gmail.com
Source: Journal of Materials Science: Materials in Electronics; Feb2024, Vol. 35 Issue 6, p1-11, 11p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 175659667
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Phenomenology of M–N rule and high-field conduction in Ge–Te–Se–Sc rare-earth doped glasses.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Feb2024, Vol. 35 Issue 6, p1-11, 11p
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      – Type: doi
        Value: 10.1007/s10854-024-12071-z
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      – Code: eng
        Text: English
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        PageCount: 11
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      – TitleFull: Phenomenology of M–N rule and high-field conduction in Ge–Te–Se–Sc rare-earth doped glasses.
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            NameFull: Agarwal, Surbhi
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            NameFull: Dwivedi, D. K.
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            NameFull: Lohia, Pooja
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            NameFull: Sharma, Suresh Kumar
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            NameFull: Habila, Mohamed A.
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            NameFull: Hossain, M. Khalid
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            – D: 21
              M: 02
              Text: Feb2024
              Type: published
              Y: 2024
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