APA (7th ed.) Citation

Voitsekhovskii, A. V., Dzyadukh, S. M., Gorn, D. I., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, G. Y., & Yakushev, M. V. (2023). Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages. Journal of Communications Technology & Electronics, 68, S132. https://doi.org/10.1134/S1064226923140176

Chicago Style (17th ed.) Citation

Voitsekhovskii, A. V., S. M. Dzyadukh, D. I. Gorn, S. A. Dvoretskii, N. N. Mikhailov, G. Yu Sidorov, and M. V. Yakushev. "Dark Current Components of NB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages." Journal of Communications Technology & Electronics 68 (2023): S132. https://doi.org/10.1134/S1064226923140176.

MLA (9th ed.) Citation

Voitsekhovskii, A. V., et al. "Dark Current Components of NB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages." Journal of Communications Technology & Electronics, vol. 68, 2023, p. S132, https://doi.org/10.1134/S1064226923140176.