Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages.
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| Title: | Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages. |
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| Authors: | Voitsekhovskii, A. V.1, vav43@mail.tsu.ru, Dzyadukh, S. M.1, Gorn, D. I.1, Dvoretskii, S. A.2, Mikhailov, N. N.2, Sidorov, G. Yu.2, Yakushev, M. V.2 |
| Source: | Journal of Communications Technology & Electronics; 2023 Suppl 2, Vol. 68, pS132-S137, 6p |
| Database: | Applied Science & Technology Source |
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| ISSN: | 10642269 |
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| DOI: | 10.1134/S1064226923140176 |
