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Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages.

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Title: Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages.
Authors: Voitsekhovskii, A. V.1, vav43@mail.tsu.ru, Dzyadukh, S. M.1, Gorn, D. I.1, Dvoretskii, S. A.2, Mikhailov, N. N.2, Sidorov, G. Yu.2, Yakushev, M. V.2
Source: Journal of Communications Technology & Electronics; 2023 Suppl 2, Vol. 68, pS132-S137, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 175932569
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages.
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        Value: 10.1134/S1064226923140176
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        Text: English
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      – TitleFull: Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages.
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              Text: 2023 Suppl 2
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