Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters. - Jiang, Yang; Du, FangZhou; Wen, KangYao; He, JiaQi; Wang, PeiRan; Li, MuJun; Tang, ChuYing; Zhang, Yi; Wang, ZhongRui; Wang, Qing; Yu, HongYu (Applied Physics Letters, 2024)