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The mechanism of degradation and failure in NiO/β-Ga2O3 heterojunction diodes induced by the high-energy ion irradiation.

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Bibliographic Details
Title: The mechanism of degradation and failure in NiO/β-Ga2O3 heterojunction diodes induced by the high-energy ion irradiation.
Authors: He, Song1, Wen, Junpeng1, Liu, Jinyang1, Hao, Weibing1, Zhou, Xuanze1, Wang, Tianqi2, Zhang, Zhengliang2, Liu, Jianli2, Xu, Guangwei1, xugw@ustc.edu.cn, Yang, Shu1, Long, Shibing1, shibinglong@ustc.edu.cn
Source: Applied Physics Letters; 10/14/2024, Vol. 125 Issue 16, p1-6, 6p
Database: Applied Science & Technology Source
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