APA (7th ed.) Citation

Omotoso, E., Igumbor, E., & Meyer, W. E. (2025). DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide. Journal of Materials Science: Materials in Electronics, 36(1), 1. https://doi.org/10.1007/s10854-024-14060-8

Chicago Style (17th ed.) Citation

Omotoso, Ezekiel, Emmanuel Igumbor, and Walter E. Meyer. "DLTS Characterisation of 107 MeV Krypton Ion-irradiated Nitrogen-doped 4H-silicon Carbide." Journal of Materials Science: Materials in Electronics 36, no. 1 (2025): 1. https://doi.org/10.1007/s10854-024-14060-8.

MLA (9th ed.) Citation

Omotoso, Ezekiel, et al. "DLTS Characterisation of 107 MeV Krypton Ion-irradiated Nitrogen-doped 4H-silicon Carbide." Journal of Materials Science: Materials in Electronics, vol. 36, no. 1, 2025, p. 1, https://doi.org/10.1007/s10854-024-14060-8.