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DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide.

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Title: DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide.
Authors: Omotoso, Ezekiel1,2, omotoeze@gmail.com, Igumbor, Emmanuel3, Meyer, Walter E.2
Source: Journal of Materials Science: Materials in Electronics; Jan2025, Vol. 36 Issue 1, p1-11, 11p
Database: Applied Science & Technology Source
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An: 181779904
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  Data: DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Jan2025, Vol. 36 Issue 1, p1-11, 11p
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RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s10854-024-14060-8
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      – Code: eng
        Text: English
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        PageCount: 11
        StartPage: 1
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      – TitleFull: DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide.
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            NameFull: Omotoso, Ezekiel
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            NameFull: Igumbor, Emmanuel
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            NameFull: Meyer, Walter E.
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            – D: 01
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              Text: Jan2025
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              Y: 2025
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              Value: 36
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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