DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide.
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| Title: | DLTS characterisation of 107 MeV krypton ion-irradiated nitrogen-doped 4H-silicon carbide. |
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| Authors: | Omotoso, Ezekiel1,2, omotoeze@gmail.com, Igumbor, Emmanuel3, Meyer, Walter E.2 |
| Source: | Journal of Materials Science: Materials in Electronics; Jan2025, Vol. 36 Issue 1, p1-11, 11p |
| Database: | Applied Science & Technology Source |
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