Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment. - Du, Fangzhou; Jiang, Yang; Wang, Peiran; Wen, Kangyao; Tang, Chuying; He, Jiaqi; Deng, Chenkai; Zhang, Yi; Li, Mujun; Wang, Xiaohui; Hu, Qiaoyu; Yu, Wenyue; et al. (Applied Physics Letters, 2025)