APA (7th ed.) Citation

Pokhriyal, S., & Biswas, S. (2025). Fabrication of Granular-Ni/MgO/Ni-Based TMR Devices Exhibiting Oscillatory Tunneling Magnetoresistance with Increasing Magnetic Field at Room Temperature. Journal of Electronic Materials, 54(3), 2038. https://doi.org/10.1007/s11664-024-11703-8

Chicago Style (17th ed.) Citation

Pokhriyal, Sumit, and Somnath Biswas. "Fabrication of Granular-Ni/MgO/Ni-Based TMR Devices Exhibiting Oscillatory Tunneling Magnetoresistance with Increasing Magnetic Field at Room Temperature." Journal of Electronic Materials 54, no. 3 (2025): 2038. https://doi.org/10.1007/s11664-024-11703-8.

MLA (9th ed.) Citation

Pokhriyal, Sumit, and Somnath Biswas. "Fabrication of Granular-Ni/MgO/Ni-Based TMR Devices Exhibiting Oscillatory Tunneling Magnetoresistance with Increasing Magnetic Field at Room Temperature." Journal of Electronic Materials, vol. 54, no. 3, 2025, p. 2038, https://doi.org/10.1007/s11664-024-11703-8.