High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation.
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| Title: | High-performance GaN HEMTs with GaON under-gate cap layer via barrier-friendly selective plasma oxidation. |
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| Authors: | He, J.1,2, Cheng, Z.1,2, Xie, S.1,2, Mi, C.1,2, Wu, X.1,2, Zhang, L.1, Zhang, Y.1,2, yzhang34@semi.ac.cn |
| Source: | Applied Physics Letters; 4/1/2025, Vol. 126 Issue 14, p1-5, 5p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/5.0260480 |
