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Controlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures.

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Title: Controlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures.
Authors: Ohtake, Akihiro1, OHTAKE.Akihiro@nims.go.jp, Hayashi, Yusuke1
Source: Applied Physics Letters; 5/19/2025, Vol. 126 Issue 20, p1-6, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 185386083
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Controlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures.
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  Data: <searchLink fieldCode="AU" term="%22Ohtake%2C+Akihiro%22">Ohtake, Akihiro</searchLink><relatesTo>1</relatesTo>, <i>OHTAKE.Akihiro@nims.go.jp</i><br /><searchLink fieldCode="AU" term="%22Hayashi%2C+Yusuke%22">Hayashi, Yusuke</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 5/19/2025, Vol. 126 Issue 20, p1-6, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=185386083
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      – Type: doi
        Value: 10.1063/5.0271426
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 6
        StartPage: 1
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      – TitleFull: Controlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures.
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            NameFull: Ohtake, Akihiro
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            NameFull: Hayashi, Yusuke
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            – D: 19
              M: 05
              Text: 5/19/2025
              Type: published
              Y: 2025
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              Value: 126
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            – TitleFull: Applied Physics Letters
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