Enhanced H2 production in ZnIn2S4/Bi4NbO8Cl S-scheme heterojunction via engineered interfacial electric field.
Saved in:
| Title: | Enhanced H2 production in ZnIn2S4/Bi4NbO8Cl S-scheme heterojunction via engineered interfacial electric field. |
|---|---|
| Authors: | Sun, Xu1, Liu, Zeng1, Song, Hongbing2, Shi, Liang1, shiliang@qust.edu.cn, Qu, Xiaofei1, quxiaofei@qust.edu.cn |
| Source: | Journal of Materials Science; May2025, Vol. 60 Issue 20, p8433-8448, 16p |
| Database: | Applied Science & Technology Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
Be the first to leave a comment!