APA (7th ed.) Citation

Tian, S., Wang, C., Wang, Y., Wang, H., Gao, C., Hu, W., . . . Yin, C. (2025). Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications. Advanced Electronic Materials, 11(8), 1. https://doi.org/10.1002/aelm.202400734

Chicago Style (17th ed.) Citation

Tian, Siying, et al. "Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications." Advanced Electronic Materials 11, no. 8 (2025): 1. https://doi.org/10.1002/aelm.202400734.

MLA (9th ed.) Citation

Tian, Siying, et al. "Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications." Advanced Electronic Materials, vol. 11, no. 8, 2025, p. 1, https://doi.org/10.1002/aelm.202400734.