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Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications.

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Bibliographic Details
Title: Freely Selective Analog and Digital Resistive Switching Behavior of In2Se3 Devices for Storage and Neuromorphic Applications.
Authors: Tian, Siying1,2, Wang, Changhao1,2, Wang, Yuanjie1,2, Wang, Honghao1,2, Gao, Chenxi1,2, Hu, Weisen1,2, Wei, Jia1,2, Chen, Fengling1, Sun, Dapeng1, Zheng, Xu1, Li, Chaobo1, lichaobo@ime.ac.cn, Yin, Chujun1, yinchujun@ime.ac.cn
Source: Advanced Electronic Materials; Jun2025, Vol. 11 Issue 8, p1-11, 11p
Database: Applied Science & Technology Source
Description
ISSN:2199160X
DOI:10.1002/aelm.202400734