APA (7th ed.) Citation

Bhattacharjee, S. K., Naha, K., Hussain, S. A., Paul, P. K., & Bhattacharjee, D. (2025). A Paradigm Shift from Write Once Read Many (WORM) Characteristics of Two Individual Organic Dyes to Complimentary Resistive Switching (CRS) Characteristics in the Resistive Memory Device when Mixed Together. Journal of Electronic Materials, 54(7), 5809. https://doi.org/10.1007/s11664-025-11961-0

Chicago Style (17th ed.) Citation

Bhattacharjee, Shyam Kumar, Koshik Naha, Syed Arshad Hussain, Pabitra Kumar Paul, and Debajyoti Bhattacharjee. "A Paradigm Shift from Write Once Read Many (WORM) Characteristics of Two Individual Organic Dyes to Complimentary Resistive Switching (CRS) Characteristics in the Resistive Memory Device When Mixed Together." Journal of Electronic Materials 54, no. 7 (2025): 5809. https://doi.org/10.1007/s11664-025-11961-0.

MLA (9th ed.) Citation

Bhattacharjee, Shyam Kumar, et al. "A Paradigm Shift from Write Once Read Many (WORM) Characteristics of Two Individual Organic Dyes to Complimentary Resistive Switching (CRS) Characteristics in the Resistive Memory Device When Mixed Together." Journal of Electronic Materials, vol. 54, no. 7, 2025, p. 5809, https://doi.org/10.1007/s11664-025-11961-0.