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A Paradigm Shift from Write Once Read Many (WORM) Characteristics of Two Individual Organic Dyes to Complimentary Resistive Switching (CRS) Characteristics in the Resistive Memory Device when Mixed Together.

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Title: A Paradigm Shift from Write Once Read Many (WORM) Characteristics of Two Individual Organic Dyes to Complimentary Resistive Switching (CRS) Characteristics in the Resistive Memory Device when Mixed Together.
Authors: Bhattacharjee, Shyam Kumar1, Naha, Koshik1, Hussain, Syed Arshad1, Paul, Pabitra Kumar2, Bhattacharjee, Debajyoti1, debu@tripurauniv.ac.in
Source: Journal of Electronic Materials; Jul2025, Vol. 54 Issue 7, p5809-5821, 13p
Database: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: A Paradigm Shift from Write Once Read Many (WORM) Characteristics of Two Individual Organic Dyes to Complimentary Resistive Switching (CRS) Characteristics in the Resistive Memory Device when Mixed Together.
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=185782333
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        Value: 10.1007/s11664-025-11961-0
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      – Code: eng
        Text: English
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        PageCount: 13
        StartPage: 5809
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      – TitleFull: A Paradigm Shift from Write Once Read Many (WORM) Characteristics of Two Individual Organic Dyes to Complimentary Resistive Switching (CRS) Characteristics in the Resistive Memory Device when Mixed Together.
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            NameFull: Bhattacharjee, Shyam Kumar
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            NameFull: Naha, Koshik
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            NameFull: Paul, Pabitra Kumar
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            – D: 01
              M: 07
              Text: Jul2025
              Type: published
              Y: 2025
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              Value: 54
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