APA (7th ed.) Citation

Lee, J., Cho, H., Park, J., Kim, B., Schlom, D. G., & Char, K. (2025). Observation of Mobility Above 2000 cm2/V s in 2DEG at LaInO3/BaSnO3 Interface by Electric‐Double‐Layer Gating. Advanced Electronic Materials, 11(9), 1. https://doi.org/10.1002/aelm.202400811

Chicago Style (17th ed.) Citation

Lee, Jaehyeok, Hyeongmin Cho, Jisung Park, Bongju Kim, Darrell G. Schlom, and Kookrin Char. "Observation of Mobility Above 2000 cm2/V s in 2DEG at LaInO3/BaSnO3 Interface by Electric‐Double‐Layer Gating." Advanced Electronic Materials 11, no. 9 (2025): 1. https://doi.org/10.1002/aelm.202400811.

MLA (9th ed.) Citation

Lee, Jaehyeok, et al. "Observation of Mobility Above 2000 cm2/V s in 2DEG at LaInO3/BaSnO3 Interface by Electric‐Double‐Layer Gating." Advanced Electronic Materials, vol. 11, no. 9, 2025, p. 1, https://doi.org/10.1002/aelm.202400811.