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Enhanced Implied Open Circuit Voltage of MoS2 via Cation‐based TFSI Passivation.

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Title: Enhanced Implied Open Circuit Voltage of MoS2 via Cation‐based TFSI Passivation.
Authors: Wibowo, Ary Anggara1, ary.wibowo@anu.edu.au, Bui, Anh Dinh1, anh.bui@anu.edu.au, Sun, Zhehao2, Chang, Li‐chun1, Yin, Zongyou2, Lu, Yuerui1, Macdonald, Daniel1, daniel.macdonald@anu.edu.au, Nguyen, Hieu Trong1
Source: Advanced Materials Interfaces; 6/23/2025, Vol. 12 Issue 12, p1-7, 7p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 186282736
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Enhanced Implied Open Circuit Voltage of MoS2 via Cation‐based TFSI Passivation.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Materials+Interfaces%22">Advanced Materials Interfaces</searchLink>; 6/23/2025, Vol. 12 Issue 12, p1-7, 7p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=186282736
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      – Type: doi
        Value: 10.1002/admi.202500059
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      – Code: eng
        Text: English
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        PageCount: 7
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      – TitleFull: Enhanced Implied Open Circuit Voltage of MoS2 via Cation‐based TFSI Passivation.
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            – D: 23
              M: 06
              Text: 6/23/2025
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              Y: 2025
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