APA (7th ed.) Citation

Jin, Y., Zhang, Z., Ke, S., Zhao, Y., Liu, C., Liu, G., & Ye, C. (2025). Performance enhancement in NbO2/HfO2 bilayer threshold switching memristor as an oscillatory neuron. Applied Physics Letters, 127(11), 1. https://doi.org/10.1063/5.0265442

Chicago Style (17th ed.) Citation

Jin, Yaoyao, Zihao Zhang, Shanwu Ke, Yifan Zhao, Canhui Liu, Guangyu Liu, and Cong Ye. "Performance Enhancement in NbO2/HfO2 Bilayer Threshold Switching Memristor as an Oscillatory Neuron." Applied Physics Letters 127, no. 11 (2025): 1. https://doi.org/10.1063/5.0265442.

MLA (9th ed.) Citation

Jin, Yaoyao, et al. "Performance Enhancement in NbO2/HfO2 Bilayer Threshold Switching Memristor as an Oscillatory Neuron." Applied Physics Letters, vol. 127, no. 11, 2025, p. 1, https://doi.org/10.1063/5.0265442.