View in EDS

Performance enhancement in NbO2/HfO2 bilayer threshold switching memristor as an oscillatory neuron.

Saved in:
Bibliographic Details
Title: Performance enhancement in NbO2/HfO2 bilayer threshold switching memristor as an oscillatory neuron.
Authors: Jin, Yaoyao1,2, Zhang, Zihao2, Ke, Shanwu2, Zhao, Yifan2, Liu, Canhui2, Liu, Guangyu2, Ye, Cong1,2, yecong@issp.ac.cn
Source: Applied Physics Letters; 9/15/2025, Vol. 127 Issue 11, p1-6, 6p
Database: Applied Science & Technology Source
FullText Text:
  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 188101639
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Performance enhancement in NbO2/HfO2 bilayer threshold switching memristor as an oscillatory neuron.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Jin%2C+Yaoyao%22">Jin, Yaoyao</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhang%2C+Zihao%22">Zhang, Zihao</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Ke%2C+Shanwu%22">Ke, Shanwu</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Zhao%2C+Yifan%22">Zhao, Yifan</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Canhui%22">Liu, Canhui</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Liu%2C+Guangyu%22">Liu, Guangyu</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Ye%2C+Cong%22">Ye, Cong</searchLink><relatesTo>1,2</relatesTo>, <i>yecong@issp.ac.cn</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 9/15/2025, Vol. 127 Issue 11, p1-6, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=188101639
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1063/5.0265442
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 1
    Titles:
      – TitleFull: Performance enhancement in NbO2/HfO2 bilayer threshold switching memristor as an oscillatory neuron.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Jin, Yaoyao
      – PersonEntity:
          Name:
            NameFull: Zhang, Zihao
      – PersonEntity:
          Name:
            NameFull: Ke, Shanwu
      – PersonEntity:
          Name:
            NameFull: Zhao, Yifan
      – PersonEntity:
          Name:
            NameFull: Liu, Canhui
      – PersonEntity:
          Name:
            NameFull: Liu, Guangyu
      – PersonEntity:
          Name:
            NameFull: Ye, Cong
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 15
              M: 09
              Text: 9/15/2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 00036951
          Numbering:
            – Type: volume
              Value: 127
            – Type: issue
              Value: 11
          Titles:
            – TitleFull: Applied Physics Letters
              Type: main
ResultId 1