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Performance enhancement in NbO2/HfO2 bilayer threshold switching memristor as an oscillatory neuron.

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Bibliographic Details
Title: Performance enhancement in NbO2/HfO2 bilayer threshold switching memristor as an oscillatory neuron.
Authors: Jin, Yaoyao1,2, Zhang, Zihao2, Ke, Shanwu2, Zhao, Yifan2, Liu, Canhui2, Liu, Guangyu2, Ye, Cong1,2, yecong@issp.ac.cn
Source: Applied Physics Letters; 9/15/2025, Vol. 127 Issue 11, p1-6, 6p
Database: Applied Science & Technology Source
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