APA (7th ed.) Citation

Voitsekhovskii, A. V., Dzyadukh, S. M., Gorn, D. I., Dvoretskii, S. A., Mikhailov, N. N., Sidorov, G. Y., & Yakushev, M. V. (2025). Determination of the Electrical Properties of the HgCdTe nB(SL)n-Based MIS Structure in a Wide Temperature Range. Journal of Communications Technology & Electronics, 70(2), 46. https://doi.org/10.1134/S106422692570010X

Chicago Style (17th ed.) Citation

Voitsekhovskii, A. V., S. M. Dzyadukh, D. I. Gorn, S. A. Dvoretskii, N. N. Mikhailov, G. Yu Sidorov, and M. V. Yakushev. "Determination of the Electrical Properties of the HgCdTe NB(SL)n-Based MIS Structure in a Wide Temperature Range." Journal of Communications Technology & Electronics 70, no. 2 (2025): 46. https://doi.org/10.1134/S106422692570010X.

MLA (9th ed.) Citation

Voitsekhovskii, A. V., et al. "Determination of the Electrical Properties of the HgCdTe NB(SL)n-Based MIS Structure in a Wide Temperature Range." Journal of Communications Technology & Electronics, vol. 70, no. 2, 2025, p. 46, https://doi.org/10.1134/S106422692570010X.