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Determination of the Electrical Properties of the HgCdTe nB(SL)n-Based MIS Structure in a Wide Temperature Range.

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Title: Determination of the Electrical Properties of the HgCdTe nB(SL)n-Based MIS Structure in a Wide Temperature Range.
Authors: Voitsekhovskii, A. V.1, vav43@mail.tsu.ru, Dzyadukh, S. M.1, Gorn, D. I.1, Dvoretskii, S. A.1,2, Mikhailov, N. N.1,2, Sidorov, G. Yu.2, Yakushev, M. V.2
Source: Journal of Communications Technology & Electronics; Feb2025, Vol. 70 Issue 2, p46-51, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 188516084
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Determination of the Electrical Properties of the HgCdTe nB(SL)n-Based MIS Structure in a Wide Temperature Range.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Communications+Technology+%26+Electronics%22">Journal of Communications Technology & Electronics</searchLink>; Feb2025, Vol. 70 Issue 2, p46-51, 6p
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        Value: 10.1134/S106422692570010X
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        Text: English
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      – TitleFull: Determination of the Electrical Properties of the HgCdTe nB(SL)n-Based MIS Structure in a Wide Temperature Range.
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              Text: Feb2025
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              Y: 2025
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