Determination of the Electrical Properties of the HgCdTe nB(SL)n-Based MIS Structure in a Wide Temperature Range.
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| Title: | Determination of the Electrical Properties of the HgCdTe nB(SL)n-Based MIS Structure in a Wide Temperature Range. |
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| Authors: | Voitsekhovskii, A. V.1, vav43@mail.tsu.ru, Dzyadukh, S. M.1, Gorn, D. I.1, Dvoretskii, S. A.1,2, Mikhailov, N. N.1,2, Sidorov, G. Yu.2, Yakushev, M. V.2 |
| Source: | Journal of Communications Technology & Electronics; Feb2025, Vol. 70 Issue 2, p46-51, 6p |
| Database: | Applied Science & Technology Source |
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