APA (7th ed.) Citation

Gao, H., Liang, G., Fu, X., Zeng, H., & Li, L. (2025). Enhanced Photocurrents Produced in the BeN3 Photodetector by Point Defects. Journal of Electronic Materials, 54(12), 11510. https://doi.org/10.1007/s11664-025-12332-5

Chicago Style (17th ed.) Citation

Gao, Haixia, Guangyao Liang, Xi Fu, Hui Zeng, and Liming Li. "Enhanced Photocurrents Produced in the BeN3 Photodetector by Point Defects." Journal of Electronic Materials 54, no. 12 (2025): 11510. https://doi.org/10.1007/s11664-025-12332-5.

MLA (9th ed.) Citation

Gao, Haixia, et al. "Enhanced Photocurrents Produced in the BeN3 Photodetector by Point Defects." Journal of Electronic Materials, vol. 54, no. 12, 2025, p. 11510, https://doi.org/10.1007/s11664-025-12332-5.

Warning: These citations may not always be 100% accurate.