High-quality β-(Al x Ga1-x)2O3 heteroepitaxy grown on (010) Ga2O3 via MOCVD and transistor demonstration. - Wu, Haozhong; Liu, Hongyu; Zhou, Xuanze; Xu, Guangwei; Wang, Yuangang; Lv, Yuanjie; Feng, Zhihong; Long, Shibing (Semiconductor Science & Technology, 2026)