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Direct Probing of Trap Dynamics in β‐Ga2O3 Schottky Barrier Diodes Using Single‐Voltage‐Pulse Characterization.

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Title: Direct Probing of Trap Dynamics in β‐Ga2O3 Schottky Barrier Diodes Using Single‐Voltage‐Pulse Characterization.
Authors: Vo, Thanh Huong1,2, Kim, Sunjae1,3, Park, Ji‐Hyeon3, Jeon, Dae‐Woo3, Hwang, Wan Sik1,2, whwang@kau.ac.kr, Hwang, Jinyoung4, jinhwang@kau.ac.kr
Source: Advanced Science; 3/3/2026, Vol. 13 Issue 13, p1-10, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 192092606
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Direct Probing of Trap Dynamics in β‐Ga2O3 Schottky Barrier Diodes Using Single‐Voltage‐Pulse Characterization.
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  Data: <searchLink fieldCode="JN" term="%22Advanced+Science%22">Advanced Science</searchLink>; 3/3/2026, Vol. 13 Issue 13, p1-10, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=192092606
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        Value: 10.1002/advs.202518859
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      – Code: eng
        Text: English
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      – TitleFull: Direct Probing of Trap Dynamics in β‐Ga2O3 Schottky Barrier Diodes Using Single‐Voltage‐Pulse Characterization.
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            – D: 03
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              Text: 3/3/2026
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              Y: 2026
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