Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial Layers.
Saved in:
| Title: | Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial Layers. |
|---|---|
| Authors: | Fiorino, Francesco Maria1, Ruffino, Francesco1,2, Catena, Alberto3 |
| Source: | Applied Sciences (2076-3417); Mar2026, Vol. 16 Issue 6, p2727, 18p |
| Database: | Applied Science & Technology Source |
|
Full text is not displayed to guests.
Login for full access.
|
|
Be the first to leave a comment!