Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial Layers.

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Bibliographic Details
Title: Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial Layers.
Authors: Fiorino, Francesco Maria1, Ruffino, Francesco1,2, Catena, Alberto3
Source: Applied Sciences (2076-3417); Mar2026, Vol. 16 Issue 6, p2727, 18p
Database: Applied Science & Technology Source
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